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Dr. A. S. Augustine Fletcher

Assistant Professor (S.G)

Department of Electronics & Communication Engineering

Contact Information

Email : augustia@srmist.edu.in

  • Ph.D (Electronics and Communication Engineering)., Karunya University, 2020
  • M.Tech (VLSI Design)., Karunya University, 2010
  • B.E (Electronics and Communication Engineering)., Anna University, 2008

  • VLSI Design
  • VLSI Technology
  • CMOS VLSI Design
  • Low power VLSI design
  • Semiconductor device modelling and simulation
  • Communication Theory
  • Satellite Communication
  • Basic Electronics, Physical Electronics
  • Transmission Lines and Wave guides
  • Electric Circuits and Networks
  • Cellular Mobile Communication
  • General Aptitude/Soft Skills
  • Electron Devices
  • Digital IC design
  • Electronics for Intelligent Machines
  • Concepts in Entrepreneurship

  • Semiconductor device modeling and simulation, nanotechnology, high-speed VLSI design, low-power VLSI design and III-V devices.

  • Murugapandiyan, P., Sri Rama Krishna, K., Revathy, A., & A.S. Augustine Fletcher (2024). Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics. Journal of Electronic Materials, 1-15. (Springer Publication-Impact factor: 2.1).
  • A.S. Augustine Fletcher, Franklin, S. A., Murugapandiyan, P., Ajayan, J., & Nirmal, D. (2024). 4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars. Journal of Electronic Materials, 1-8. (Springer Publication-Impact factor: 2.1).
  • A.S. Augustine Fletcher, Nirmal, D., Ajayan, J., & Murugapandiyan, P. (2023). Is SiC a Predominant Technology for Future High Power Electronics?: A Critical Review, Current Nano Science, In Press (Bentham Publication-Impact factor: 1.5).
  • Sivamani, C., Murugapandiyan, P., Mohanbabu, A., & A.S. Augustine Fletcher (2023). High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: A simulation study. Microelectronics Journal, 140, 105946. (Elsvier Publication-Impact factor: 2.2).
  • Murugapandiyan, P., Kalva, S. R. K., Rajyalakshmi, V., Princy, B. A., Tarauni, Y.U., A.S. Augustine Fletcher, & Wasim, M. (2023). A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications. Micro and Nanostructures, 177, 207545. (Elsvier Publication-Impact factor: 3.1).
  • Ajayan, J., Nirmal, D., Mohankumar, P., Mounika, B., Bhattacharya, S., Tayal, S., & A.S. Augustine Fletcher (2022). Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review. Materials Science in Semiconductor Processing, 151, 106982. (Elsvier Publication-Impact factor: 4.1).
  • Hamza, K. H., Nirmal, D., A.S. Augustine Fletcher, Ajayan, J., & Natarajan, R. (2022). Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier. Materials Science and Engineering: B, 284, 115863. (Elsvier Publication-Impact factor: 3.6).
  • A.S. Augustine Fletcher, Nirmal D, Arivazhagan L, Ajayan J, Merlin Gilbert Raj, Husna Hamza K,
    Murugapandian P and Ramkumar Natarajan (2022) “A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations”, Journal of Electronic Materials. (Springer Publication-Impact factor: 2.1).
  • P. Murugapandiyan, D. Nirmal, Md. Tanvir Hasan, Arathy Varghese, J. Ajayan, A.S. Augustine Fletcher and N. Ramkumar (2021) “Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study”, Materials Science and Engineering B, 273, 115449, 1-7. (ELSVIER Publication-Impact factor: 3.6).
  • A.S Augustine Fletcher, Nirmal D, Ajayan J, Arivazhagan J, Husna Hamza and P. Murugapandian (2021) “60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites”, Silicon. (Springer Publication-Impact factor: 3.4).
  • K. Husna Hamza, D. Nirmal, A.S Augustine Fletcher, L. Arivazhagan, J Ajayan and Ramkumar Natarajan (2021) “Highly scaled graded channel GaN HEMTwith peak drain current of 2.48 A/mm”, AEU-International Journal of Electronics and Communications, 136, 153774. (ELSVIER Publication-Impact factor: 3.2).
  • J. Ajayan, D. Nirmal, Shubham Tayal, Sandip Bhattacharya, L Arivazhagan, A.S Augustine Fletcher, P. Murugapandiyan and D Ajitha (2021) “Nanosheet field effect transistors-A next generation device to keep Moore’s law alive: An intensive study”, Microelectronics Journal 114, 105141 (ELSVIER Publication-Impact factor: 2.2).
  • A.S. Augustine Fletcher, D. Nirmal, J.Ajayan, L.Arivazhagan, (2020) “An Intensive study on assorted substrates suitable for high JFOM AlGaN/GaN HEMT”, Silicon Journal (Springer Publication-Impact factor:3.4)
  • A.S. Augustine Fletcher, D. Nirmal, L. Arivazhagan and J. Ajayan (2019) “Enhancement of JFOM in III-V HEMT combined with discrete field plate and AlGaN blocking layer”, Journal of RF and Microwave Computer Aided Engineering, e22040, 1-9. (Wiley Publication-Impact factor: 1.7).
  • A.S. Augustine Fletcher, D. Nirmal, J.Ajayan and L.Arivazhagan (2019) “Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications”, International Journal of Electronics and Communication, Vol. 99, 325-330. (ELSVIER Publication-Impact factor: 3.2).
  • J Ajayan, D Nirmal, P Mohankumar, Dheena Kuriyan, A.S. Augustine Fletcher, L Arivazhagan, B Santhosh Kumar (2019) “GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review”, Microelectronics Journal, Vol.92, 104604, 1-18. (ELSVIER Publication-Impact factor: 2.2).
  • L Arivazhagan, D Nirmal, D Godfrey, J Ajayan, P Prajoon, A.S Augustine Fletcher, A Amir Anton Jone, JS Raj Kumar (2019) Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre- wave applications”, International Journal of Electronics and Communications, Vol.108, 189-194. (ELSVIER Publication-Impact factor: 3.2).
  • J. Ajayan, D.Nirmal, Deena Kurian, P. Mohan Kumar, L. Arivazhagan, A.S. Augustine Fletcher, T.D. Subash and M. Saravannan (2019) “Investigation of impact of gate underlap/overlap on the analog/RF performance of composite channel double gate MOSFETs”, Journal of Vacuum Science & Technology B, American Vacuum Society, Vol.37, 1-7. (AVS Publication-Impact factor: 1.41).
  • D. Nirmal, L. Arivazhagan, A.S. Augustine Fletcher, J. Ajayan, P. Prajoon (2018) “Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application”, Superlattices and Microstructures, Vol.113, 110-120. (ELSVIER Publication-Impact factor: 3.1).
  • A.S. Augustine Fletcher, D. Nirmal, (2017) “A survey of Gallium Nitride HEMT for RF and high power application”, Superlattice and Microstructures, Vol.109, 519-537. (ELSVIER Publication-Impact factor: 3.1).
  • Pramod Kumar M.P, A.S. Augustine Fletcher (2014) “A Survey on Modeling and Simulation of MEMS Switches and Its Application in Power Gating Techniques”, International Journal of Engineering Research and Applications, ISSN: 2248-9622, Vol. 4, Issue 4(Version 1), 1-6. (Scopus Indexed)
  • Pramod Kumar MP, A.S. Augustine Fletcher (2014) “A Survey on Leakage Power Reduction Techniques by Using Power Gating Methodology”, International Journal of Engineering Trends and Technology, ISSN:2231-5381, Vol.9, Issue.11, 566-571.(Scopus Indexed)

  • Beatris, V. R., A.S. Augustine Fletcher (2022). Low power cmos voltage reference circuit for high efficient power management chips. In 2022 6th International Conference on Devices, Circuits and Systems (ICDCS) (pp.248-250). IEEE. (Scopus Indexed)
  • Adisaya, R. J. K., Beatris, V. V. R., & A.S. Augustine Fletcher (2022). Analysis of p-GaN based high electron mobility transistor for RF power application. In 2022 6th International Conference on Devices, Circuits and Systems (ICDCS) (pp. 23-26). IEEE. (Scopus Indexed)
  • Hamza K Husna, D. Nirmal, S. Merlin Gilbert Raj, J. Ajayan, L. Arivazhagan and A.S Augustine Fletcher (2021) “6 GHz GaN HEMT Linear Power Amplifier” 3rd IEEE International Conference on Signal Processing and Communication (ICPSC), 219-222. Karunya University, Coimbatore. (Scopus Indexed).
  • A.S. Augustine Fletcher, D. Nirmal, J.Ajayan and L.Arivazhagan (2020) “Influence of assorted back barriers on AlGaN/GaN HEMT for 5G K-band applications”, IEEE International Conference on Signal Processing and Communication, Karunya University, Coimbatore. (Scopus Indexed).
  • M. Benny Sathish and A.S. Augustine Fletcher (2017) “Design and Modeling of HEMT Using Field Plate Technique”, IEEE International Conference on Innovations in Electrical, Electronics, Instrumentation and Media Technology, Karunya University, Coimbatore. (Scopus Indexed).
  • A.S. Augustine Fletcher (2015) “Novel SEC-DAEC correction codes derived from orthogonal Latin square codes”, International conference on Trends in Technology and Engineering, Arjun College of Technology, Coimbatore. (Non scopus indexed).
  • Pramod Kumar MP and A.S. Augustine Fletcher (2014) “A novel hybrid multiple mode power gating”, IEEE International Conference on Electronics and Communication Systems, Karunya University, Coimbatore. (Scopus Indexed).
  • A.S. Augustine Fletcher (2010) “Techniques to optimize area and power complexity using enhanced Sequential Logic”, International Conference on Intelligent Science and Technology, Sun Engineering College, Nagercoil.

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  • Organized a workshop on TCAD software for the Technical event, Eureka 2017 held at Karunya University, Coimbatore 2017.
  • Event co-ordinator for “Mindkraft 2017-National level Technofest” held at Karunya University during 23 rd to 25 th of March 2017.
  • Event Co-ordinator for “Eureka 2015-Dr. Debug” held at Karunya University on 13 th March 2015.
  • Organized one day orientation program on “Learning Management System” held at Karunya University, Coimbatore on 2 nd August 2014.
  • Event Co-ordinator in “QUASAR 2014-Megamind” held at Karunya University during 6 th to 7 th of March 2014.
  • Organized a workshop on “PCB design for Embedded system” during the year 2013, ECE department, Karunya University, Coimbatore.

  • Delivered a keynote address on “Gallium Nitride HEMT for 5G Applications” A Technical talk held at Karunya University, Coimbatore on 18 th September 2019.
  • Session Chair in International conference on “Device circuits and System” Sponsored by IEEE Electron Device Society, Coimbatore Chapter held at Karunya University during 23 rd and 24 th of April 2024.
  • Session Chair in International conference on “Device circuits and System” Sponsored by IEEE Electron Device Society, Coimbatore Chapter held at Karunya University during 16 th and 17 th of March 2018.

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  • 2024 to Till date: Assistant Professor (Selection Grade), Electronics and Communication Engineering, SRM Institute of Science and Technology, Chennai.
  • 2022 to 2024: Assistant Professor (Selection Grade), Electronics and Communication Engineering, Karunya Institute of Technology and Sciences, Coimbatore.
  • 2021 to 2022: Assistant Professor (7000), Electronics and Communication Engineering, Karunya Institute of Technology and Sciences Coimbatore.
  • 2012 to 2021: Assistant Professor (6000), Electronics and Communication Engineering, Karunya Institute of Technology and Sciences, Coimbatore.
  • 2011-2012: Assistant Professor, Electronics and Communication Engineering, Alpha College of Engineering, Affiliated to Anna University, Chennai.
  • 2010-2011: Lecturer, Electronics and Communication Engineering, DMI College of Engineering, Affiliated to Anna University, Chennai.

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  • Received “Achievers award” for being Co-Investigator for the funded project titled “ A Compact modelling of GaN based HEMT device for high power microwave application” to the tune of Rs. 21.98 Lakh from Directorate of Extramural Research and Intellectual Property Rights (2016).
  • Received “Best paper award” in the IEEE conference on “Signal Processing and Communication” held at Karunya University (2019).
  • Received Rs.5000 for publishing the paper titled ”A survey of Gallium Nitride HEMT for RF and High power Application” in the Journal Superlattice and Microstructures with an Impact factor of 2.38 (ELSVIER Publication).

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