Dr. A. S. Augustine Fletcher

• Semiconductor device modeling and simulation
• Nanotechnology
• High-speed VLSI design
• Low-power VLSI design
• III-V devices.

• VLSI Design
• EDA for ASIC and FPGA
• Embedded System Design using Arduino
• Advanced Digital System Design
• Analog and Linear Electronic Circuits
• VLSI Technology
• CMOS VLSI Design
• Low Power VLSI Design
• Semiconductor Device Modelling and Simulation
• Communication Theory
• Satellite Communication
• Basic Electronics
• Physical Electronics
• Transmission Lines and Waveguides
• Electric Circuits and Networks
• Cellular Mobile Communication
• General Aptitude / Soft Skills
• Electron Devices
• Digital IC Design
• Electronics for Intelligent Machines
• Concepts in Entrepreneurship
• Basics of Electrical and Electronics Engineering
• Constitution of India

• 2024 to Till date: Assistant Professor (Selection Grade), Electronics and Communication Engineering, SRM Institute of Science and Technology, Chennai.
• 2022 to 2024: Assistant Professor (Selection Grade), Electronics and Communication Engineering, Karunya Institute of Technology and Sciences, Coimbatore.
• 2021 to 2022: Assistant Professor (7000), Electronics and Communication Engineering, Karunya Institute of Technology and Sciences Coimbatore.
• 2012 to 2021: Assistant Professor (6000), Electronics and Communication Engineering, Karunya Institute of Technology and Sciences, Coimbatore.
• 2011-2012: Assistant Professor, Electronics and Communication Engineering, Alpha College of Engineering, Affiliated to Anna University, Chennai.
• 2010-2011: Lecturer, Electronics and Communication Engineering, DMI College of Engineering, Affiliated to Anna University, Chennai.

• Achieved “Elite” in NPTEL course titled “Selection of Nano materials for Energy Harvesting and Storage Applications” during July-August 2025.
• Received “Achievers award” for being Co-Investigator for the funded project titled “ A Compact modelling of GaN based HEMT device for high power microwave application” to the tune of Rs. 21.98 Lakh from Directorate of Extramural Research and Intellectual Property Rights (2016).
• Received “Best paper award” in the IEEE conference on “Signal Processing and Communication” held at Karunya University (2019).
• Received Rs.5000 for publishing the paper titled ”A survey of Gallium Nitride HEMT for RF and High power Application” in the Journal Superlattice and Microstructures with an Impact factor of 2.38 (ELSVIER Publication).

Journal Publications:

• A.S. Augustine Fletcher, P. Murugapandiyan, Asisa Kumar Panigrahy, J. Ajayan, Deepak Kumar Panda and, Bestley Joe S (2026) “MXene based Nanostructures for NeuroBiosensing: A Review”, Materials Today Sustainability, 101233, Elsvier Publications (Impact factor: 9.4) -In Review.
• P. Deepak Kumar, T. Sikhamani, prakthishya, A.S. Augustine Fletcher, J Ajayan and Assia Kumar Panigrahy (2026) “Analysis and Performance Optimization of a High-Sensitivity Quantum Dot FET Biosensor”, IEEE Access (Impact factor: 4.2) -In Review.
• A. Daniel Raj, P. Murugapandiyan and A.S Augustine Fletcher (2026) Enhancement of Sc0.18Al0.82N/GaN HEMTs Performance by Channel Engineering, Micro and Nano Structures, Elsvier Publications (Impact factor: 3.1) -In Review.
• A.S Augustine Fletcher, P. Murugapandiyan, J. Ajayan, Asisa Kumar Panigrahy, S. Bestley Joe, and V. Vanitha. (2026) "Graphene materials and devices for 6G networks: A critical review." Microelectronic Engineering : 112488. ELSVIER Publications (Impact factor: 3.3 )
• Tamilarasi R, Poornima S, Ajayan J and A.S Augustine Fletcher (2026) “Investigation of Radiation-Induced Performance Degradation in TFETs and DG-JL-TFETs" Applied Physics A- Material Science & Processing, Springer Publications (Impact factor: 2.8) -In Review.
• Tamilarasi R and and A.S Augustine Fletcher (2026) “In Depth analysis of Double Gate Junctionless Tunnel Field Effect Transistors for Mixed Signal Applications” Analog Integrated Circuits and Signal Processing 127, no. 3, 28. Springer Publications (Impact factor: 1.8)
• P. Murugapandiyan, A.S Augustine Fletcher, R. Saravana Kumar and Saju Subramaniayan (2026) “Improving Lead-Free MAGeI3 Perovskite Solar Cell Performance with Ce-ZnO:Al Electron Transport Layer: Numerical Simulation using SCAPS-1D”, Journal of Physics and Chemistry of Solids, Elsvier Publications (Impact factor: 4.9) -In Review.
• S. Bestley Joe, S. Aaron James, S. Maflin Shaby and A.S. Augustine Fletcher (2026) “Analysis on the Electrical Characteristics of Piezoelectric Saw Device for Gas Sensing Applications” International Research Journal of Multidisciplinary Technovation, 8(3),422-438. (Scopus Indexed)
• J.Ajayan, S. Sreejith, B. Mounika, A.S. Augustine Fletcher, Ribu Mathew, M. Saravanan and Puneet Sharma (2025) “Inorganic nanocatalysts for energy systems, environmental/industrial processes and healthcare applications: A comprehensive review “ Materials Today Sustainability, 101233, Elsvier Publications (Impact factor: 9.4).
• Murugapandiyan P, Maheswari S, A.S. Augustine Fletcher, Saranya G and Anandan P. (2025) Recent advancement in ScAlN/GaN high electron mobility transistors: Materials, properties, and device performance. Materials Science in Semiconductor Processing. 1;193:109509. Elsvier Publication (Impact factor: 4.6)
• Murugapandiyan P, A.S. Augustine Fletcher, Hasan MT, Ramkumar N and Revathy A (2025) Recent advancement in β-Ga2O3 MOSFETs: From material growth to device architectures for high-power electronics. Microelectronic Engineering. 14:112359. Elsvier Publication- (Impact factor: 3.1)
• A.S. Augustine Fletcher, P. Murugapandiyan, A. Mohanbabu, S. Dhanasekaran and G. Saranya (2025) “Enhancement of fMAX/fT in α-Ga2O3 MOSFET with Ultra-Wide Bandgap MgO and CaO blocking layers”, Applied Physics A- Material Science & Processing, 131(5), 1-14- Springer Publications (Impact factor: 2.8).
• S. Dhanasekar, V. Govindaraj and A.S. Augustine Fletcher (2025) “An Area Efficient approach to realize Vedic Multiplier using 4:2 compressor adder for image processing application”, International Journal of Electronics, 1-21, Taylor and Francis publications (Impact factor: 1.1)
• Bestley Joe S, Vanitha V, A.S. Augustine Fletcher and Rahul Krishnan P (2025) “Performance evaluation on the frequency response of quartz based microcantilever beam piezoelectric energy harvester”, International Journal of Advanced Science and Engineering- In Revision (Scopus Indexed).
• Murugapandiyan, P., Sri Rama Krishna, K., Revathy, A., & A.S. Augustine Fletcher (2024). Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics. Journal of Electronic Materials, 1-15. (Springer Publication-Impact factor: 2.5).
• A.S. Augustine Fletcher, Franklin, S. A., Murugapandiyan, P., Ajayan, J., & Nirmal, D. (2024). 4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars. Journal of Electronic Materials, 1-8. (Springer Publication-Impact factor: 2.5).
• A.S. Augustine Fletcher, Nirmal, D., Ajayan, J., & Murugapandiyan, P. (2023). Is SiC a Predominant Technology for Future High Power Electronics?: A Critical Review, Current Nano Science, In Press (Bentham Publication-Impact factor: 1.5).
• Sivamani, C., Murugapandiyan, P., Mohanbabu, A., & A.S. Augustine Fletcher (2023). High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: A simulation study. Microelectronics Journal, 140, 105946. (Elsvier Publication-Impact factor: 2.3).
• Murugapandiyan, P., Kalva, S. R. K., Rajyalakshmi, V., Princy, B. A., Tarauni, Y.U., A.S. Augustine Fletcher, & Wasim, M. (2023). A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications. Micro and Nanostructures, 177, 207545. (Elsvier Publication-Impact factor: 3).
• Ajayan, J., Nirmal, D., Mohankumar, P., Mounika, B., Bhattacharya, S., Tayal, S., & A.S. Augustine Fletcher (2022). Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review. Materials Science in Semiconductor Processing, 151, 106982. (Elsvier Publication-Impact factor: 4.6).
• Hamza, K. H., Nirmal, D., A.S. Augustine Fletcher, Ajayan, J., & Natarajan, R. (2022). Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier. Materials Science and Engineering: B, 284, 115863. (Elsvier Publication-Impact factor: 4.6).
• A.S. Augustine Fletcher, Nirmal D, Arivazhagan L, Ajayan J, Merlin Gilbert Raj, Husna Hamza K, Murugapandian P and Ramkumar Natarajan (2022) “A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations”, Journal of Electronic Materials. (Springer Publication-Impact factor: 2.5).
• P. Murugapandiyan, D. Nirmal, Md. Tanvir Hasan, Arathy Varghese, J. Ajayan, A.S. Augustine Fletcher and N. Ramkumar (2021) “Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study”, Materials Science and Engineering B, 273, 115449, 1-7. (ELSVIER Publication-Impact factor: 4.6).
• A.S Augustine Fletcher, Nirmal D, Ajayan J, Arivazhagan J, Husna Hamza and P. Murugapandian (2021) “60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites”, Silicon. (Springer Publication-Impact factor: 3.3).
• K. Husna Hamza, D. Nirmal, A.S Augustine Fletcher, L. Arivazhagan, J Ajayan and Ramkumar Natarajan (2021) “Highly scaled graded channel GaN HEMTwith peak drain current of 2.48 A/mm”, AEU-International Journal of Electronics and Communications, 136, 153774. (ELSVIER Publication-Impact factor: 3.2).
• J. Ajayan, D. Nirmal, Shubham Tayal, Sandip Bhattacharya, L Arivazhagan, A.S Augustine Fletcher, P. Murugapandiyan and D Ajitha (2021) “Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study”, Microelectronics Journal 114, 105141 (ELSVIER Publication-Impact factor: 2.3).
• A.S. Augustine Fletcher, D. Nirmal, J.Ajayan, L.Arivazhagan, (2020) “An Intensive study on assorted substrates suitable for high JFOM AlGaN/GaN HEMT”, Silicon Journal (Springer Publication-Impact factor: 3.3)
• A.S. Augustine Fletcher, D. Nirmal, L. Arivazhagan and J. Ajayan (2019) “Enhancement of JFOM in III-V HEMT combined with discrete field plate and AlGaN blocking layer”, Journal of RF and Microwave Computer Aided Engineering, e22040, 1-9. (Wiley Publication-Impact factor: 1).
• A.S. Augustine Fletcher, D. Nirmal, J.Ajayan and L.Arivazhagan (2019) “Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications”, International Journal of Electronics and Communication, Vol. 99, 325-330. (ELSVIER Publication-Impact factor: 3.1).
• J Ajayan, D Nirmal, P Mohankumar, Dheena Kuriyan, A.S. Augustine Fletcher, L Arivazhagan, B Santhosh Kumar (2019) “GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review”, Microelectronics Journal, Vol.92, 104604, 1-18. (ELSVIER Publication-Impact factor: 2.3).
• L Arivazhagan, D Nirmal, D Godfrey, J Ajayan, P Prajoon, A.S Augustine Fletcher, A Amir Anton Jone, JS Raj Kumar (2019) Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre- wave applications”, International Journal of Electronics and Communications, Vol.108, 189-194. (ELSVIER Publication-Impact factor: 3.1).
• J. Ajayan, D.Nirmal, Deena Kurian, P. Mohan Kumar, L. Arivazhagan, A.S. Augustine Fletcher, T.D. Subash and M. Saravannan (2019) “Investigation of impact of gate underlap/overlap on the analog/RF performance of composite channel double gate MOSFETs”, Journal of Vacuum Science & Technology B, American Vacuum Society, Vol.37, 1-7. (AVS Publication-Impact factor: 1.2).
• D. Nirmal, L. Arivazhagan, A.S. Augustine Fletcher, J. Ajayan, P. Prajoon (2018) “Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application”, Superlattices and Microstructures, Vol.113, 110-120. (ELSVIER Publication-Impact factor: 3).
• A.S. Augustine Fletcher, D. Nirmal, (2017) “A survey of Gallium Nitride HEMT for RF and high power application”, Superlattice and Microstructures, Vol.109, 519-537. (ELSVIER Publication-Impact factor: 3).
• Pramod Kumar M.P, A.S. Augustine Fletcher (2014) “A Survey on Modeling and Simulation of MEMS Switches and Its Application in Power Gating Techniques”, International Journal of Engineering Research and Applications, ISSN: 2248-9622, Vol. 4, Issue 4(Version 1), 1-6. (Scopus Indexed)
• Pramod Kumar MP, A.S. Augustine Fletcher (2014) “A Survey on Leakage Power Reduction Techniques by Using Power Gating Methodology”, International Journal of Engineering Trends and Technology, ISSN: 2231-5381, Vol.9, Issue.11, 566-571.(Scopus Indexed)

Conference Presentation / Publication:

• A.S Augustine Fletcher, Divya Lakshmi S, Dishya M, Atchaya R and Vaseegaran A (2026) “Optimization of Power Delay Product in Vedic Multiplier for Next Generation Biomedical Applications”, International Conference on Cognitive Computing and Networking Systems (ICC-CNS) held at Vignan’s Foundation for Science, Technology and Research, Guntur during 11-13th of June 2026. (Scopus Indexed)
• G. Praveena, Ramkumar Natarajan and A.S Augustine Fletcher (2026) “Design Hybrid Puma-Addax Optimization-based Fine-Tuned GoogleNet and ShuffleNet V2 for Non-Invasive Diabetes Detection”, International Conference on Next-Gen Quantum and Advanced Computing: Algorithms, Security, and Beyond (NQComp) held at Manipal Institute of Technology, Bangalore during 5-6 th of March 2026. (Scopus Indexed)
• N. Kavitha and A.S. Augustine Fletcher (2026) “ A review of GaN HEMT for 6G: Powering the Next Generation Wireless Networks” 4th International IEEE Conference on Electronics and Renewable Systems (ICEARS 2026) held at St. Mother Therasa Engineering College, Thoothukudi during 11-13 th of Febrauary 2026. (Scopus Indexed)
• N. Kavitha and A.S. Augustine Fletcher (2026) “ Optimisation of Gate Geometry Scaling in GaN HEMTs for High-Frequency 6G Communication Applications” 8th International IEEE Conference on Inventive Materials Science and Applications ( ICIMSA 2026 ) held at Muthayammal Engineering College, Namakkal during 13-15 th of May 2026. (Scopus Indexed)
• A. Akram Ahamed, A.S. Trisha, S. Vaishnavi, S. Neveythitha, G. Yuvaraj and A.S. Augustine Fletcher (2026) “Beyond CMOS: Neuromorphic and quantum Inspired VLSI for the next era of Intelligent computing” IEEE International Conference on Signal Processing & Electronic Design held at Chandigarh College of Engineering and Technology,Chandigarh during 23-24 January 2026. (Scopus Indexed)
• A. Akram Ahamed, A.S. Trisha, S. Vaishnavi, S. Neveythitha, G. Yuvaraj and A.S. Augustine Fletcher (2026) “Beyond CMOS: Neuromorphic and quantum Inspired VLSI for the next era of Intelligent computing” IEEE International Conference on Signal Processing & Electronic Design held at Chandigarh College of Engineering and Technology,Chandigarh during 23-24 January 2026. (Scopus Indexed)
• A.S. Augustine Fletcher, R. Tamilarasi, G. Saranya and P.Murugapandiyan (2025) “Lg = 10 nm Gate All Around Si based Nanowire MOSFET for High Performance Computing”, 8th IEEE International Conference on Computational System and Information technology for sustainable solution held at RV college of Engg, Bangalore. DOI: 10.1109/CSITSS64042.2024.10817005. (Scopus Indexed)
• V. Vanitha, S. Bestley Joe, Rahul Krishnan, A.S. Augustine Fletcher, M. Anju, V. Akila (2025) “Cognitive Threats Detection Model using Nature Inspired Chimpanzee Optimization for IoT Networks”, Proc. of International Conference on Advanced Research in Electronics and Communication Systems (ICARECS-2025) DOI:10.2991/978-94-6463-754-0_55 (Scopus Indexed)
• P.Murugapandiyan, A.Revathy, R. Saravanakumar, A.S. Augustine Fletcher, Ramkumar Natarajan (2025) “High performance InAlN/InGaN HEMTs on β-Ga2O3 substrates for advanced RF Applications”, 5th IEEE international conference on Micro/Nanoelectronics Devices, Circuits & systems held at NIT Silchar- Accepted
• Beatris, V. R., A.S. Augustine Fletcher (2022). Low power cmos voltage reference circuit for high efficient power management chips. In 2022 6th International Conference on Devices, Circuits and Systems (ICDCS) (pp. 248-250). IEEE. (Scopus Indexed)
• Adisaya, R. J. K., Beatris, V. V. R., & A.S. Augustine Fletcher (2022). Analysis of p-GaN based high electron mobility transistor for RF power application. In 2022 6th International Conference on Devices, Circuits and Systems (ICDCS) (pp. 23-26). IEEE. (Scopus Indexed)
• Hamza K Husna, D. Nirmal, S. Merlin Gilbert Raj, J. Ajayan, L. Arivazhagan and A.S Augustine Fletcher (2021) “6 GHz GaN HEMT Linear Power Amplifier” 3rd IEEE International Conference on Signal Processing and Communication (ICPSC), 219-222. Karunya University, Coimbatore. (Scopus Indexed).
• A.S. Augustine Fletcher, D. Nirmal, J.Ajayan and L.Arivazhagan (2020) “Influence of assorted back barriers on AlGaN/GaN HEMT for 5G K-band applications”, IEEE International Conference on Signal Processing and Communication, Karunya University, Coimbatore. (Scopus Indexed).
• M. Benny Sathish and A.S. Augustine Fletcher (2017) “Design and Modeling of HEMT Using Field Plate Technique”, IEEE International Conference on Innovations in Electrical, Electronics, Instrumentation and Media Technology, Karunya University, Coimbatore. (Scopus Indexed).
• A.S. Augustine Fletcher (2015) “Novel SEC-DAEC correction codes derived from orthogonal Latin square codes”, International conference on Trends in Technology and Engineering, Arjun College of Technology, Coimbatore. (Non scopus indexed).
• Pramod Kumar MP and A.S. Augustine Fletcher (2014) “A novel hybrid multiple mode power gating”, IEEE International Conference on Electronics and Communication Systems, Karunya University, Coimbatore. (Scopus Indexed).
• A.S. Augustine Fletcher (2010) “Techniques to optimize area and power complexity using enhanced Sequential Logic”, International Conference on Intelligent Science and Technology, Sun Engineering College, Nagercoil.

Book Chapter publications:

• G. Indhumathi, G.Saranya , A.S. Augustine Fletcher, Naveen Kumar, (2025)“Integration of Artificial Intelligence, Healthcare, and Information Technology: Challenges, Issues and Solutions,” Generative AI in Healthcare: Transforming Medical Practices" Wiley-Accepted
• Mohanbabu, N. Mohankumar, A.S. Augustine Fletcher, P. Murugapandiyan, S. Baskaran, N. Vinodh kumar, Angsuman Sarkar (2025) ” Enhancement Mode GaN-Based Power HEMTs for Automotive Power Electronics: Recent Developments and Future Trends” VLSI for Artificial Intelligence and Machine Learning Applications-Wiley and Scrivener - In Revision

Workshops / Seminars / FDPs / STTP (Conducted / Attended):

• Organized a guest lecture titled “Networks for the future”, Department of ECE, SRM Institute of Science and Technology, Vadapalani, Chennai on 13th October 2025.
• Organized a Entrepreneurship awareness program titled “Don’t chase Ideas-Discover Problems: A practical guide to build real startups”, Department of ECE, SRM Institute of Science and Technology, Vadapalani, Chennai on 11th August 2025.
• Organized a career guidance program titled “Igniting VLSI Aspirations:Career Pathways”, Department of ECE, SRM Institute of Science and Technology, Vadapalani, Chennai on 3rd March 2025.
• Organized a workshop on TCAD software for the Technical event, Eureka 2017 held at Karunya University, Coimbatore 2017.
• Event co-ordinator for “Mindkraft 2017-National level Technofest” held at Karunya University during 23 rd to 25 th of March 2017.
• Event Co-ordinator for “Eureka 2015-Dr. Debug” held at Karunya University on 13 th March 2015.
• Organized one day orientation program on “Learning Management System” held at Karunya University, Coimbatore on 2 nd August 2014.
• Event Co-ordinator in “QUASAR 2014-Megamind” held at Karunya University during 6 th to 7 th of March 2014.
• Organized a workshop on “PCB design for Embedded system” during the year 2013, ECE department, Karunya University, Coimbatore.

Invited Talk:

• Organized a workshop on “PCB design for Embedded system” during the year 2013, ECE department, Karunya University, Coimbatore.
• Delivered a keynote address on “Gallium Nitride HEMT for 5G Applications” A Technical talk held at Karunya University, Coimbatore on 18 th September 2019.
• Session Chair in International conference on “Device circuits and System” Sponsored by IEEE Electron Device Society, Coimbatore Chapter held at Karunya University during 23 rd and 24 th of April 2024.
• Session Chair in International conference on “Device circuits and System” Sponsored by IEEE Electron Device Society, Coimbatore Chapter held at Karunya University during 16 th and 17 th of March 2018.

Scientific Journal review Assignments:

• ACS Nano Letters
• ACS Applied Electronic Materials
• ACS Omega
• Journal of Computational Electronics
• Physica Scipta
• IEEE Access
• IEEE Transactions on Device and Materials Reliability
• IEEE Transactions on Semiconductor Manufacturing
• IEEE Transactions on Computer Aided Design of Integrated circuits and Systems
• IEEE Transactions on Dielectrics and Electrical Insulation
• IEEE Microwave and Wireless Technology Letters
• IEEE Microwave Theory and Techniques
• Scientific Reports
• Science China Information Sciences
• Journal of material Science
• Reviews on advanced material science
• Journal of Electronic Materials
• IOP-Semiconductor Science and Technology
• Silicon
• Journal of Engineering
• IETE Technical Review
• Rare Metals